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Proceedings Paper

The endpoint detection technique for deep submicrometer plasma etching
Author(s): Wei Wang; Zhi-yun Du; Yong Zeng; Zhong-went Lan
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Paper Abstract

The availability of reliable optical sensor technology provides opportunities to better characterize and control plasma etching processes in real time, they could play a important role in endpoint detection, fault diagnostics and processes feedback control and so on. The optical emission spectroscopy (OES) method becomes deficient in the case of deep submicrometer gate etching. In the newly developed high density inductively coupled plasma (HD-ICP) etching system, Interferometry endpoint (IEP) is introduced to get the EPD. The IEP fringe count algorithm is investigated to predict the end point, and then its signal is used to control etching rate and to call end point with OES signal in over etching (OE) processes step. The experiment results show that IEP together with OES provide extra process control margin for advanced device with thinner gate oxide.

Paper Details

Date Published: 28 August 2009
PDF: 5 pages
Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 738216 (28 August 2009); doi: 10.1117/12.834854
Show Author Affiliations
Wei Wang, Chongqing Univ. of Posts and Telecommunications (China)
Zhi-yun Du, Chongqing Univ. of Posts and Telecommunications (China)
Yong Zeng, Chongqing Univ. of Posts and Telecommunications (China)
Zhong-went Lan, Univ. of Electronics Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7382:
International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging
Farzin Amzajerdian; Chun-qing Gao; Tian-yu Xie, Editor(s)

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