Share Email Print
cover

Proceedings Paper

Effect of deposition pressure on structural and optical properties of scandium-doped ZnO thin film prepared by sputtering
Author(s): Cunxing Miao; Zhanxia Zhao; Min Li; Zhongquan Ma
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Microstructural, optical and electrical properties of Sc-doped ZnO films grown by RF magnetron sputtering at room temperature were investigated. The deposition pressure was varied from 0.3 to 2.0 Pa. XRD spectra indicated that the (100) peak of the film weakened as the reaction pressure decreased and the (110) peak strengthened at a preferred pressure, 0.3Pa. Compare with (100) and (110) peaks, the intensity of (002) peak was relative weak. The strain in the film was investigated. The average transmittance of these films was above 90% in the wavelength range from 400 to 800 nm, while decreased in short wavelength region due to the light scattering. More significantly, various optical band gap of the films were found correspond with different pressure. The causation might be due to the Burstein-Moss effect.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811G (24 August 2009); doi: 10.1117/12.834834
Show Author Affiliations
Cunxing Miao, Shanghai Univ. (China)
Zhanxia Zhao, Shanghai Univ. (China)
Min Li, Shanghai Univ. (China)
Zhongquan Ma, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top