Share Email Print
cover

Proceedings Paper

Nanocrystalline silicon quantum dots thin films prepared by magnetron reaction sputtering
Author(s): Weiping Zhao; Jinxiang Deng; Bing Yang; Zhenrui Yu; Mariano Aceves
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Silicon is a kind of excellent semiconductor material and is one of the core material of microelectronics. But it is not a fine luminescent material. The photoluminescence(PL) will be obtained by excitation only when the size of silicon partials reduced to a certain value. Nanocrystalline silicon films have special structure and many excellent optoelectronic properties and are supposed to be applied in optoelectronic devices and large scale integrated circuits. In this paper, Nanocrystalline silicon films was deposited on silicon substrate by RF magnetron sputtering with pure Si target. And the working gas is the mixture of oxygen and argon .The content of O2 in working gas (O2/ O2 + Ar) and the power of sputtering were changed separately .However, the substrate temperature, working gas pressure and other conditions were definite. After annealing in the stove, we got the Nanocrystalline silicon particles in the thin films. Fourier transform infrared(FTIR) transmittance measurement was carried out to characterized Nanocrystalline silicon films. X-ray photoelectron spectroscopy (XPS) measurement was also performed to estimate the atom ratio of the Nanocrystalline silicon films. Raman scattering measurements was also taken in to characterize the Nanocrystalline silicon films. The formation of Nanocrystalline silicon filmswere depended partly on the parameters of experiment. The annealed silicon films were researched that the size of the Nanocrystalline silicon particles proved to be largely impacted by the annealing temperature in the thin film

Paper Details

Date Published: 24 August 2009
PDF: 10 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738113 (24 August 2009); doi: 10.1117/12.834822
Show Author Affiliations
Weiping Zhao, Beijing Univ. of Technology (China)
Jinxiang Deng, Beijing Univ. of Technology (China)
Bing Yang, Beijing Univ. of Technology (China)
Zhenrui Yu, Institute Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Mariano Aceves, Institute Nacional de Astrofísica, Óptica y Electrónica (Mexico)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

© SPIE. Terms of Use
Back to Top