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Proceedings Paper

Method for fabricating Au-Al0.30Ga0.70N lateral Schottky photodiode
Author(s): Caijing Cheng; Zhengxiong Lu; Ian Zhao; Jiaxin Ding; Junjie Si; Weiguo Sun
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Paper Abstract

Au-Al0.30Ga0.70N Lateral Schottky photodiode was fabricated by an electrical breakdown of a single Schottky barrier of metal-semiconductor-metal Au-Al0.30Ga0.70N film rocking curves are about 523.7 arcsec for the (00.2) plane reflection and about 989.5 arcsec for the (10.5) plane reflection. Dark current of the device is 1.2nA at the reverse bias of 1 V at room temperature. Analysis of the measured characteristics showed the ideality factor n, the zero-bias barrier height ΦB0 and the serial resistance RS are equal to 1.8, 0.80eV and 9.8KΩ, respectively. Ideality factor away from 1 and reverse leakage currents can be attributed from crystalline defects in the materials.

Paper Details

Date Published: 5 August 2009
PDF: 8 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831X (5 August 2009); doi: 10.1117/12.834560
Show Author Affiliations
Caijing Cheng, Luoyang Optoelectronic Institute (China)
Zhengxiong Lu, Luoyang Optoelectronic Institute (China)
Ian Zhao, Luoyang Optoelectronic Institute (China)
Jiaxin Ding, Luoyang Optoelectronic Institute (China)
Junjie Si, Luoyang Optoelectronic Institute (China)
Weiguo Sun, Luoyang Optoelectronic Institute (China)


Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications
Jeffery Puschell; Hai-mei Gong; Yi Cai; Jin Lu; Jin-dong Fei, Editor(s)

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