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Proceedings Paper

Raman scattering of In[sub]0.82[/sub]Ga[sub]0.18[/sub]As grown by two step technique
Author(s): Tie-min Zhang; Guo-qing Miao; Jun Fu; Hong Lin; Fu-heng Zhang; Hang Song
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Paper Abstract

In0.82Ga0.18As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP substrates with two-step growth technique. Three groups sample with different buffer growth conditions were analyzed by Raman scattering. The intensity of GaAs-like LO phonon of Raman scattering, the frequency shift of the GaAs-like LO phonon and asymmetry ratio [symbol] of GaAs-like LO phonon of samples were characterized the optical property of In0.82Ga0.18As epilayer, respectively. The results of experiments showed that the optimum buffer In content was 0.82, the optimum buffer thickness was about 100 nm, and the optimum buffer growth temperature was about 450 °C.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810E (24 August 2009); doi: 10.1117/12.834556
Show Author Affiliations
Tie-min Zhang, Hainan Normal Univ. (China)
Guo-qing Miao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Jun Fu, Hainan Normal Univ. (China)
Hong Lin, Hainan Normal Univ. (China)
Fu-heng Zhang, Hainan Normal Univ. (China)
Hang Song, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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