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Proceedings Paper

Fabrication and photoelectrical properties of AZO/SiO2/p-Si heterojunction
Author(s): Bo He; ZhongQuan Ma; YanLi Shi; Jing Xu; Lei Zhao; Feng Li; Cheng Shen; NanSheng Zhang; Ling Shen; XiaJie Meng; ChengYue Zhou; CunXing Miao
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Paper Abstract

ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered p-Si (100) substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The optical and electrical properties of the Al doped - ZnO films were characterized by UV-VIS spectrophotometer, current-voltage measurement, and four point probe technique, respectively. The results show that AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical rectifying behavior.

Paper Details

Date Published: 24 August 2009
PDF: 6 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812W (24 August 2009); doi: 10.1117/12.834555
Show Author Affiliations
Bo He, Shanghai Univ. (China)
ZhongQuan Ma, Shanghai Univ. (China)
YanLi Shi, Kunming Institute of Physics (China)
Jing Xu, Wuhan Univ. of Technology (China)
Lei Zhao, Shanghai Univ. (China)
Feng Li, Shanghai Univ. (China)
Cheng Shen, Shanghai Univ. (China)
NanSheng Zhang, Shanghai Univ. (China)
Ling Shen, Shanghai Univ. (China)
XiaJie Meng, Shanghai Univ. (China)
ChengYue Zhou, Shanghai Univ. (China)
CunXing Miao, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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