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Proceedings Paper

Quantum well heterostructures studied by deep-level transient spectroscopy
Author(s): Jitka Kosíková; Karel Žd'ánský; Alok Rudra; Eli Kapon
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Paper Abstract

Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements (C-V) have been performed on AlGaAs/GaAs diode structures containing quantum wells (QWs) with graded or stepped barriers content and compared with structures without QWs. DLTS peaks have been observed only for the structures containing the QWs under reduced voltage pulse excitation. A mechanism of carrier capture into and escape from the quantum wells has been discussed.

Paper Details

Date Published: 18 May 2009
PDF: 8 pages
Proc. SPIE 7355, Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II, 73550D (18 May 2009); doi: 10.1117/12.834242
Show Author Affiliations
Jitka Kosíková, Institute of Physics AS (Czech Republic)
Karel Žd'ánský, Institute of Photonics and Electronics AS (Czech Republic)
Alok Rudra, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Eli Kapon, Ecole Polytechnique Fédérale de Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 7355:
Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing II
Miloslav Dusek; Ivan Prochazka; Roman Sobolewski, Editor(s)

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