Share Email Print
cover

Proceedings Paper

Mode pattern analysis of gallium nitride-based laser diodes
Author(s): Xiaomin Jin; Sean Jobe; Simeon Trieu; Benafsh Husain; Jason Flickinger; Bei Zhang; Tao Dai; Xiang-Ning Kang; Guo-Yi Zhang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design.

Paper Details

Date Published: 28 August 2009
PDF: 12 pages
Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 73820O (28 August 2009); doi: 10.1117/12.834103
Show Author Affiliations
Xiaomin Jin, California Polytechnic State Univ. (United States)
Sean Jobe, California Polytechnic State Univ. (United States)
Simeon Trieu, California Polytechnic State Univ. (United States)
Benafsh Husain, California Polytechnic State Univ. (United States)
Jason Flickinger, California Polytechnic State Univ. (United States)
Bei Zhang, Peking Univ. (China)
Tao Dai, Peking Univ. (China)
Xiang-Ning Kang, Peking Univ. (China)
Guo-Yi Zhang, Peking Univ. (China)


Published in SPIE Proceedings Vol. 7382:
International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging
Farzin Amzajerdian; Chun-qing Gao; Tian-yu Xie, Editor(s)

© SPIE. Terms of Use
Back to Top