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Proceedings Paper

Semiconductor design for tuned charge transport characteristics
Author(s): Antonio Facchetti; Zhihua Chen; Yen Zheng; Jordan R. Quinn; Christopher R. Newman; He Yan; Tse Nga Ng; Sanjiv Sambandan; Rene Lujan; Ana Claudia Arias
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Paper Abstract

In this paper we report on the use of two solution-processable polymeric and molecular n-channel semiconductors for the fabrication of transistors and CMOS inverters by gravure printing and inkjet printing. Furthermore, the injket-printed TFT/invertor stability characteristics are analyzed and discussed.

Paper Details

Date Published: 14 October 2009
PDF: 8 pages
Proc. SPIE 7487, Optical Materials in Defence Systems Technology VI, 748702 (14 October 2009); doi: 10.1117/12.833641
Show Author Affiliations
Antonio Facchetti, Polyera Corp. (United States)
Zhihua Chen, Polyera Corp. (United States)
Yen Zheng, Polyera Corp. (United States)
Jordan R. Quinn, Polyera Corp. (United States)
Christopher R. Newman, Polyera Corp. (United States)
He Yan, Polyera Corp. (United States)
Tse Nga Ng, Palo Alto Research Ctr. (United States)
Sanjiv Sambandan, Palo Alto Research Ctr. (United States)
Rene Lujan, Palo Alto Research Ctr. (United States)
Ana Claudia Arias, Palo Alto Research Ctr. (United States)

Published in SPIE Proceedings Vol. 7487:
Optical Materials in Defence Systems Technology VI
James G. Grote; François Kajzar; Roberto Zamboni, Editor(s)

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