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Proceedings Paper

Predictive modeling for EBPC in EBDW
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Paper Abstract

We demonstrate a flow for e-beam proximity correction (EBPC) to e-beam direct write (EBDW) wafer manufacturing processes, demonstrating a solution that covers all steps from the generation of a test pattern for (experimental or virtual) measurement data creation, over e-beam model fitting, proximity effect correction (PEC), and verification of the results. We base our approach on a predictive, physical e-beam simulation tool, with the possibility to complement this with experimental data, and the goal of preparing the EBPC methods for the advent of high-volume EBDW tools. As an example, we apply and compare dose correction and geometric correction for low and high electron energies on 1D and 2D test patterns. In particular, we show some results of model-based geometric correction as it is typical for the optical case, but enhanced for the particularities of e-beam technology. The results are used to discuss PEC strategies, with respect to short and long range effects.

Paper Details

Date Published: 23 September 2009
PDF: 13 pages
Proc. SPIE 7488, Photomask Technology 2009, 74883J (23 September 2009); doi: 10.1117/12.833482
Show Author Affiliations
Rainer Zimmermann, Synopsys GmbH (Germany)
Martin Schulz, Synopsys GmbH (Germany)
Wolfgang Hoppe, Synopsys GmbH (Germany)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Wolfgang Demmerle, Synopsys GmbH (Germany)
Alex Zepka, Synopsys, Inc. (United States)
Artak Isoyan, Synopsys, Inc. (United States)
Lars Bomholt, Synopsys Switzerland LLC (Switzerland)
Serdar Manakli, CEA-LETI, MINATEC (France)
Laurent Pain, CEA-LETI, MINATEC (France)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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