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Proceedings Paper

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method
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Paper Abstract

This paper employs the Waveguide decomposition method as an efficient rigorous electromagnetic field (EMF) solver to investigate three dimensional mask-induced imaging artifacts in EUV lithography. The major mask diffraction induced imaging artifacts are first identified by applying the Zernike analysis of the mask nearfield spectrum of 2D lines/spaces. Three dimensional mask features like 22nm semidense/dense contacts/posts, isolated elbows and line-ends are then investigated in terms of lithographic results. After that, the 3D mask-induced imaging artifacts such as feature orientation dependent best focus shift, process window asymmetries, and other aberration-like phenomena are explored for the studied mask features. The simulation results can help lithographers to understand the reasons of EUV-specific imaging artifacts and to devise illumination and feature dependent strategies for their compensation in the optical proximity correction (OPC) for EUV masks. At last, an efficient approach using the Zernike analysis together with the Waveguide decomposition technique is proposed to characterize the impact of mask properties for the future OPC process.

Paper Details

Date Published: 30 September 2009
PDF: 9 pages
Proc. SPIE 7488, Photomask Technology 2009, 74882C (30 September 2009); doi: 10.1117/12.833464
Show Author Affiliations
Feng Shao, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Tim Fühner, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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