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Proceedings Paper

Inspection of 32nm imprinted patterns with an advanced e-beam inspection system
Author(s): Hong Xiao; Long Ma; Fei Wang; Yan Zhao; Jack Jau; Kosta Selinidis; Ecron Thompson; S. V. Sreenivasan; Douglas J. Resnick
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Paper Abstract

We used electron beam (e-beam) inspection (EBI) systems to inspect nano imprint lithography (NIL) resist wafers with programmed defects. EBI with 10nm pixel sizes has been demonstrated and capability of capturing program defects sized as small as 4nm has been proven. Repeating defects have been captured by the EBI in multiple die inspections to identify the possible mask defects. This study demonstrated the feasibility of EBI as the NIL defect inspection solution of 32nm and beyond.

Paper Details

Date Published: 23 September 2009
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74881V (23 September 2009); doi: 10.1117/12.833419
Show Author Affiliations
Hong Xiao, Hermes Microvision, Inc. (United States)
Long Ma, Hermes Microvision, Inc. (United States)
Fei Wang, Hermes Microvision, Inc. (United States)
Yan Zhao, Hermes Microvision, Inc. (United States)
Jack Jau, Hermes Microvision, Inc. (United States)
Kosta Selinidis, Molecular Imprints, Inc. (United States)
Ecron Thompson, Molecular Imprints, Inc. (United States)
S. V. Sreenivasan, Molecular Imprints, Inc. (United States)
Douglas J. Resnick, Molecular Imprints, Inc. (United States)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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