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Proceedings Paper

Nanocrystalline Si-based metal-oxide-semiconductor photodetectors
Author(s): Zhenrui Yu; Mariano Aceves-Mijares; J. A. Luna Lopez; Jinxiang Deng
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Paper Abstract

In this paper, we report on a MOS-like structured Si photodetector whose response range covers UV-VIS-NIR with good responsivity. The devices have an Al/Silicon-Rich Oxide (SRO)/Si MOS-like structure fabricated with standard Si IC technology. Its reverse leakage current is as small as 10-10 A at V= -5 V. However, when illuminated with white or UV light with intensity of ~3.6 mW/cm2, the reverse current increase greatly. The photocurrent to dark current ratio can be as high as 1.5×105 for white light and 8.7×104 for UV light at V= -5 V, indicating that the structure is very sensitive to both visible and UV light. The spectral response of the device shows good responsivity from 200 nm to near infrared, with maximum responsivity of 0.78 A/W at 900 nm. The role of the SRO layer and the Si substrate in obtaining such a high photoresponse in UV-VIS-NIR range was analyzed.

Paper Details

Date Published: 24 August 2009
PDF: 7 pages
Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811H (24 August 2009); doi: 10.1117/12.833385
Show Author Affiliations
Zhenrui Yu, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Mariano Aceves-Mijares, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
J. A. Luna Lopez, Benemérita Univ. Autónoma de Puebla (Mexico)
Jinxiang Deng, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7381:
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors
Xu-yuan Chen; Yue-lin Wang; Zhi-ping Zhou; Qing-kang Wang, Editor(s)

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