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Proceedings Paper

Single-mask double-patterning lithography
Author(s): Rani S. Ghaida; George Torres; Puneet Gupta
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Paper Abstract

This paper proposes shift-trim double patterning lithography (ST-DPL), a cost-effective method for achieving 2× pitchrelaxation with a single photomask (especially at polysilicon layer). The mask is re-used for the second exposure by applying a translational mask-shift. Extra printed features are then removed using a non-critical trim exposure. The viability of ST-DPL is demonstrated. The proposed method has many advantages with virtually no area overhead (< 0.3% standard-cell area): (1) cuts mask-cost to nearly half that of standard-DPL, (2) reduces overlay errors between the two patterns and can virtually eliminate it in some process implementations, (3) alleviates the bimodal problem in doublepatterning, and (4) enhances throughput of first-rate scanners. We implement a small 45nm standard-cell library and small benchmark designs with ST-DPL to illustrate its viability.

Paper Details

Date Published: 23 September 2009
PDF: 11 pages
Proc. SPIE 7488, Photomask Technology 2009, 74882J (23 September 2009); doi: 10.1117/12.833190
Show Author Affiliations
Rani S. Ghaida, Univ. of California, Los Angeles (United States)
George Torres, Univ. of California, Los Angeles (United States)
Puneet Gupta, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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