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Proceedings Paper

The study on nonlinear bifurcation dynamics of a semiconductor ring laser
Author(s): Bin Zhang; Lu-Hong Mao; Sheng Xie; Wei-Lian Guo; Yan Chen; Xin Yu; Xian-Jie Li; Li-Fang Qi
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Paper Abstract

Based on dynamics models of the electronic bi-stable behavior in a semiconductor ring laser and using the methods of the modern nonlinear dynamics, the stability and bifuraction behavior in a semiconductor ring laser are analyzed and calculated in this paper. The calculated results show that the ring laser can undergoes the Hopf bifurcation by changing pump parameters which can lead the complex nonlinear movement such as limit cycle and Chaos. The effects of backscatter parameters on the operation regions are also calculated The calculated results show that the change of backscatter parameter can result different dynamics behaviors including bifurcation. At last the theoretical result is compared with experiment. The device process and structure is described and the experiment result agree with our theory.

Paper Details

Date Published: 28 August 2009
PDF: 5 pages
Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 738213 (28 August 2009); doi: 10.1117/12.832158
Show Author Affiliations
Bin Zhang, Tianjin Univ. (China)
Lu-Hong Mao, Tianjin Univ. (China)
Sheng Xie, Tianjin Univ. (China)
Wei-Lian Guo, Tianjin Univ. (China)
Yan Chen, Tianjin Univ. (China)
Xin Yu, Tianjin Univ. (China)
Xian-Jie Li, Chinese Electronic Group, 13th Research Lab. (China)
Li-Fang Qi, Chinese Electronic Group, 13th Research Lab. (China)


Published in SPIE Proceedings Vol. 7382:
International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging
Farzin Amzajerdian; Chun-qing Gao; Tian-yu Xie, Editor(s)

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