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Proceedings Paper

Electrical characteristics of phosphorescent organic light emitting devices with various emissive film thickness
Author(s): Tao Wang; Junsheng Yu; Jun Wang; Lu Li; Yadong Jiang
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Paper Abstract

Multilayer organic light-emitting diodes are fabricated with a structure of ITO/CuPc/NPB/CBP:(t-bt)2Ir(acac)/BCP/Alq/LiF:Al, and the current density vs voltage characteristic of organic phosphorescent devices is investigated. The current density characteristics of triple-layer devices with different emission layer thickness is simulated into three regions, which are no-emission region, emission region and saturated region, corresponding to ohmic contact model, trap charge limited current model and space charge limited current model. The film thickness of emission layer shows obvious effect on the device current density.

Paper Details

Date Published: 22 May 2009
PDF: 5 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72823A (22 May 2009); doi: 10.1117/12.831023
Show Author Affiliations
Tao Wang, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)
Jun Wang, Univ. of Electronic Science and Technology of China (China)
Lu Li, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)

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