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White organic light emitting diodes based on a novel starburst fluorene derivativeFormat | Member Price | Non-Member Price |
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Paper Abstract
White organic light-emitting diodes (WOLEDs) are fabricated by thermal vacuum deposition method based on a novel
starburst fluorene derivative of 1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl) benzene (HKEthFLYPh). The
photoluminescent (PL) spectrum of the HKEthFLYPh peaks at 374 nm, which overlapped with the absorption spectra of
N,N'-di(naphthalen-2-yl)-N,N'-diphenyl-benzine (NPB), tris(8-hydroxyquinolinato)aluminum (Alq) and
5,6,11,12-tetraphenylnaphthacene (Rubrene) materials. And PL spectra of HKEthFLYPh : NPB, HKEthFLYPh : Alq and
HKEthFLYPh : Rubrene blend in chloroform solution showed characteristics of NPB, Alq and Rubrene. Using
HKEthFLYPh as energy transfer layer, NPB as a hole transporting and blue light-emitting layer, Rubrene as a yellow
emissive layer, and Alq as an electron transporter, WOLEDs with a undoped structure are fabricated. The structure of
WOLEDs are indium-tin-oxide (ITO)/NPB (40-x nm)/HKEthFLYPh (4 nm)/NPB (x nm)/Rubrene (1 nm)/Alq (40
nm)/Mg : Ag (200 nm). The results demonstrated that when x=0 nm the device showed a yellowish white light with the
Commission Internationale de l'Eclairage chromaticity (CIE) coordinates changing from (x=0.37, y=0.40) to (x=0.34,
y=0.37) under bias voltage from 4 to 10 V; when x=5 nm the device exhibited a pure white light emission with CIE
coordinates changing from (x=0.32, y=0.30) to (x=0.34, y=0.34) under bias voltage from 4 to 10 V. Also, the pure white
device had a turn-on voltage (defined as the bias required to produce a measurable luminance of 1 cd/m2) of 3.8 V, a
luminance of 1137 cd/cm2 at a bias voltage of 15 V, and a maximum luminance efficiency of 0.51 lm/W at 4.25 V.
Paper Details
Date Published: 21 May 2009
PDF: 6 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 728238 (21 May 2009); doi: 10.1117/12.831021
Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)
PDF: 6 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 728238 (21 May 2009); doi: 10.1117/12.831021
Show Author Affiliations
Shuangling Lou, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)
Wen Wen, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)
Wen Wen, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Qing Zhang, Shanghai Jiaotong Univ. (China)
Qing Zhang, Shanghai Jiaotong Univ. (China)
Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)
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