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Proceedings Paper

White organic light emitting diodes based on a novel starburst fluorene derivative
Author(s): Shuangling Lou; Junsheng Yu; Wen Wen; Yadong Jiang; Qing Zhang
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Paper Abstract

White organic light-emitting diodes (WOLEDs) are fabricated by thermal vacuum deposition method based on a novel starburst fluorene derivative of 1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl) benzene (HKEthFLYPh). The photoluminescent (PL) spectrum of the HKEthFLYPh peaks at 374 nm, which overlapped with the absorption spectra of N,N'-di(naphthalen-2-yl)-N,N'-diphenyl-benzine (NPB), tris(8-hydroxyquinolinato)aluminum (Alq) and 5,6,11,12-tetraphenylnaphthacene (Rubrene) materials. And PL spectra of HKEthFLYPh : NPB, HKEthFLYPh : Alq and HKEthFLYPh : Rubrene blend in chloroform solution showed characteristics of NPB, Alq and Rubrene. Using HKEthFLYPh as energy transfer layer, NPB as a hole transporting and blue light-emitting layer, Rubrene as a yellow emissive layer, and Alq as an electron transporter, WOLEDs with a undoped structure are fabricated. The structure of WOLEDs are indium-tin-oxide (ITO)/NPB (40-x nm)/HKEthFLYPh (4 nm)/NPB (x nm)/Rubrene (1 nm)/Alq (40 nm)/Mg : Ag (200 nm). The results demonstrated that when x=0 nm the device showed a yellowish white light with the Commission Internationale de l'Eclairage chromaticity (CIE) coordinates changing from (x=0.37, y=0.40) to (x=0.34, y=0.37) under bias voltage from 4 to 10 V; when x=5 nm the device exhibited a pure white light emission with CIE coordinates changing from (x=0.32, y=0.30) to (x=0.34, y=0.34) under bias voltage from 4 to 10 V. Also, the pure white device had a turn-on voltage (defined as the bias required to produce a measurable luminance of 1 cd/m2) of 3.8 V, a luminance of 1137 cd/cm2 at a bias voltage of 15 V, and a maximum luminance efficiency of 0.51 lm/W at 4.25 V.

Paper Details

Date Published: 21 May 2009
PDF: 6 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 728238 (21 May 2009); doi: 10.1117/12.831021
Show Author Affiliations
Shuangling Lou, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)
Wen Wen, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Qing Zhang, Shanghai Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)

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