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Proceedings Paper

Compositional dependence of absorption edges in evaporated Pb1-xGeTe thin films as infrared short-wavelength cutoff filters
Author(s): Bin Li; Suying Zhang; Ping Xie; Dingquan Liu
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Paper Abstract

Semiconductors which exhibit a very rapid transition from opacity to transparency at the intrinsic edge are particularly useful in making excellent absorption filters. In this paper, we report the investigation on composition dependence of absorption edges in the evaporated Pb1-xGexTe thin films, which will be of a potentiality to fabricate a single-layer infrared short-wavelength cutoff filter by means of controlling the composition and processes. It is revealed that for thin films with an identical Te concentration, the absorption edges will shift towards short-wavelength with the increase of Ge concentration x in films; whereas, for those with a similar Ge concentration within a small range of deviation, the edges will also shift towards the short-wavelength with Te concentration approach to stoichiometry.ÿÿ

Paper Details

Date Published: 21 May 2009
PDF: 5 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72822L (21 May 2009); doi: 10.1117/12.830991
Show Author Affiliations
Bin Li, Shanghai Institute of Technical Physics (China)
Suying Zhang, Shanghai Institute of Technical Physics (China)
Ping Xie, Shanghai Institute of Technical Physics (China)
Dingquan Liu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)

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