Share Email Print
cover

Proceedings Paper

Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement
Author(s): Nan Ma; Jun Deng; Dingyuan Li; Yanli Shi; Guangdi Shen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, several samples of GaAs/AlGaAs multiple quantum well material with different parameters are present, the measurement result using photoluminescence(PL) spectroscopy shows the energy between the ground state in valence band and the ground state in conduction band of the well for each sample. Through transfer matrix method (TTM), we obtain bound state eigenvalues, and the corresponding eigenfunctions of arbitrarily graded in one-dimensional potential wells. With theoretical calculation, the peak response wavelength of the QWIP is determined. The calculated result is coincident with the one from photocurrent spectrum for the same sample very well. The comparison of theory and experiment confirms that PL scan is an important testing method for the quality of material.

Paper Details

Date Published: 5 August 2009
PDF: 8 pages
Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 738332 (5 August 2009); doi: 10.1117/12.830954
Show Author Affiliations
Nan Ma, Beijing Univ. of Technology (China)
Jun Deng, Beijing Univ. of Technology (China)
Dingyuan Li, Beijing Univ. of Technology (China)
Yanli Shi, Kunming Institute of Physics (China)
Guangdi Shen, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7383:
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications

© SPIE. Terms of Use
Back to Top