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Proceedings Paper

Photo-reflectance characterization of USJ activation in millisecond annealing
Author(s): Will Chism; Michael Current; Victor Vartanian
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Paper Abstract

Photo-reflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This paper details the use of photo-reflectance to characterize dopant activation in ultra-shallow junction (USJ) structures formed using millisecond anneal processes. USJ structures were formed in silicon using 500eV boron implantation with a dose of 1015/cm2, followed by flash anneals at 1250-1350°C. Reference metrology was performed using secondary ion mass spectroscopy (SIMS) and various sheet resistance (Rs) methods. Methods to calibrate photo-reflectance signals to active carrier concentration in USJ structures, including halo-doped samples, are described. Photo-reflectance is shown to be highly sensitive to active dopant concentration in USJ structures formed by millisecond annealing. Additionally, PR provides fast "on-product" measurement capability.

Paper Details

Date Published: 24 August 2009
PDF: 10 pages
Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050T (24 August 2009); doi: 10.1117/12.830900
Show Author Affiliations
Will Chism, Xitronix Corp. (United States)
Michael Current, Michael Current Scientific (United States)
Victor Vartanian, International SEMATECH Manufacturing Initiative (United States)

Published in SPIE Proceedings Vol. 7405:
Instrumentation, Metrology, and Standards for Nanomanufacturing III
Michael T. Postek; John A. Allgair, Editor(s)

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