Share Email Print
cover

Proceedings Paper

Methods for improving ion beam etching uniformity of large-sized DOEs
Author(s): Ying Xiong; Xiaobo Zhang; Gang Liu; Ying Liu; Dequan Xu; Yangchao Tian
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

DOE is often produced by lithography and ion beam etching. The etching depth error directly affects the diffraction performance of DOE. The uniformity of ion beam etching depth is particularly important for large-sized DOEs in that errors by ion beam etching uniformity would result in an obvious aberrant spot of intensity in the focal area of DOE, which consumedly reduces the uniformity of target field in uniform illumination. On the basis of the KZ-400 ion beam etching equipment the method of improving DOE ion beam etching uniformity is investigated. The step-by-step method is used to improve the uniformity of ion beam etching, in which the etching time and location are adjusted. Experimental result shows that in the range of 190mm along the major axis of ion beam source the etching uniformity of DOE increases from ±5% to ±1.3%.

Paper Details

Date Published: 21 May 2009
PDF: 4 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72821O (21 May 2009); doi: 10.1117/12.830882
Show Author Affiliations
Ying Xiong, Univ. of Science and Technology of China (China)
Xiaobo Zhang, Univ. of Science and Technology of China (China)
Gang Liu, Univ. of Science and Technology of China (China)
Ying Liu, Univ. of Science and Technology of China (China)
Dequan Xu, Univ. of Science and Technology of China (China)
Yangchao Tian, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)

© SPIE. Terms of Use
Back to Top