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Proceedings Paper

Surface-sensitive strain analysis of Si/SiGe line structures by Raman and UV-Raman spectroscopy
Author(s): Marek Roelke; Michael Hecker; Peter Hermann; David Lehninger; Yvonne Ritz; Ehrenfried Zschech; Victor Vartanian
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Paper Abstract

Strained silicon is applied to the transistor channel of leading-edge CMOS devices, significantly increasing carrier mobility and requiring measurement techniques to characterize strain. In the investigation reported here, we apply Raman spectroscopy using excitation by both visible and UV light in conjunction with finite-element analysis to analyze the strain distribution adjacent to embedded silicon-germanium (SiGe) line structures in silicon wafers. In agreement with the modeling results, a strong strain depth gradient is obtained for the silicon lines, whereas the strain within the SiGe regions depends weakly on the depth. We show further how the stress tensor and its distribution in both SiGe and Si regions is modified when changing the geometry of the line structures. For the strained Si line region, a sensitive dependence of the stress state on the geometry is obtained.

Paper Details

Date Published: 21 August 2009
PDF: 9 pages
Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050S (21 August 2009); doi: 10.1117/12.830866
Show Author Affiliations
Marek Roelke, GLOBALFOUNDARIES Inc. (Germany)
Michael Hecker, GLOBALFOUNDARIES Inc. (Germany)
Peter Hermann, GLOBALFOUNDARIES Inc. (Germany)
Fraunhofer-Ctr. Nanoelectronic Technologies (Germany)
David Lehninger, GLOBALFOUNDARIES Inc. (Germany)
Yvonne Ritz, GLOBALFOUNDARIES Inc. (Germany)
Ehrenfried Zschech, GLOBALFOUNDARIES Inc. (Germany)
Victor Vartanian, International SEMATECH Manufacturing Initiative (United States)

Published in SPIE Proceedings Vol. 7405:
Instrumentation, Metrology, and Standards for Nanomanufacturing III
Michael T. Postek; John A. Allgair, Editor(s)

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