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Proceedings Paper

Three regions in the material removal rate with the increase of the concentration of abrasives slurry
Author(s): YinBao Guo; Wei Yang; Qiao Xu; YaGuo Li
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Paper Abstract

During chemical mechanical planarization polishing (CMP), with the increase of the concentration of abrasives slurry, there are three regions of material removal rate (MRR). It is a noticeable phenomenon for several wafer material, including copper, aluminum, tungsten, silicon and silicon oxide. In this paper, a new abrasion mechanism model in solid-solid contact mode of the CMP, proposed by Luo and David, is revised to explain the three regions and two transitions between these regions. Experiment data from fast polishing process (FPP) supports the prediction of material removal rate regions.

Paper Details

Date Published: 20 May 2009
PDF: 6 pages
Proc. SPIE 7282, 4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 72820O (20 May 2009); doi: 10.1117/12.830806
Show Author Affiliations
YinBao Guo, Xiamen Univ. (China)
Wei Yang, Xiamen Univ. (China)
Qiao Xu, Chengdu Fine Optical Engineering Research Ctr. (China)
YaGuo Li, Chengdu Fine Optical Engineering Research Ctr. (China)


Published in SPIE Proceedings Vol. 7282:
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; John M. Schoen; Yoshiharu Namba; Shengyi Li, Editor(s)

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