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Proceedings Paper

193 nm angle-resolved scatterfield microscope for semiconductor metrology
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Paper Abstract

An angle-resolved scatterfield microscope (ARSM) featuring 193 nm excimer laser light was developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and telecentric conjugate back focal plane (CBFP) and a scan module for resolving Köhler illumination in the sample plane. Angular scanning of the sample plane was achieved by linearly scanning an aperture across the 12 mm diameter CBFP, with aperture size as small as 0.4 mm for some scans. For each aperture, the sample was illuminated over a range of angles from 12° to 48°, corresponding to a numerical aperture of 0.2 to 0.74. Angleresolved measurement results are presented for grating targets with nominal linewidths down to 50 nm.

Paper Details

Date Published: 24 August 2009
PDF: 8 pages
Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050R (24 August 2009); doi: 10.1117/12.830683
Show Author Affiliations
Yeung Joon Sohn, National Institute of Standards and Technology (United States)
KT Consulting Inc. (United States)
Richard Quintanilha, National Institute of Standards and Technology (United States)
Bryan M. Barnes, National Institute of Standards and Technology (United States)
KT Consulting Inc. (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 7405:
Instrumentation, Metrology, and Standards for Nanomanufacturing III
Michael T. Postek; John A. Allgair, Editor(s)

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