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Proceedings Paper

Post exposure bake tuning for 32nm photomasks
Author(s): A. E. Zweber; T. Komizo; J. Levin; J. Whang; S. Nemoto; S. Kondo
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Paper Abstract

In optimizing e-beam resist process conditions for photomask lithography, the primary performance measurements for optimization are resolution, critical dimension uniformity (CDU), line edge roughness (LER), and linearity. Through technology nodes, one parameter that has consistently shown a critical impact on these factors is the post exposure bake (PEB) condition. With 32nm e-beam resist technologies having reduced temperature sensitivity, this paper investigates the current impact of PEB conditions. The PEB assessment will summarize the influence of PEB temperature, duration and environment flow on 32 nm positive tone resists by reporting and analyzing two of the primary performance measurements: CDU and LER.

Paper Details

Date Published: 23 September 2009
PDF: 10 pages
Proc. SPIE 7488, Photomask Technology 2009, 74880J (23 September 2009); doi: 10.1117/12.830123
Show Author Affiliations
A. E. Zweber, IBM Corp. (United States)
T. Komizo, Toppan Photomasks, Inc. (United States)
J. Levin, IBM Corp. (United States)
J. Whang, IBM Corp. (United States)
S. Nemoto, Toppan Photomasks, Inc. (United States)
S. Kondo, Toppan Photomasks, Inc. (United States)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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