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Proceedings Paper

CMP process comparison for 150mm larger area InSb (111)B focal plane array substrates
Author(s): P. Flint; L. P. Allen; G. Dallas; B. D. Ruchert; D. Bakken; K. Blanchat; S. R. Vangala; W. D. Goodhue; D. Bliss; H. Dauplais
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Paper Abstract

As size requirements and pixel viabilities for mid-wavelength infrared (MWIR) focal plane arrays (FPAs) continue to increase, larger InSb substrate diameters are of significant interest. To improve resolution and sensitivity requirements for high performance infrared focal plane array (IRFPA) imaging systems in the 1-5.4 μm region (77°K), the surface of new larger diameter (150mm) InSb substrates must meet or surpass stringent demands. The scale-up to 150mm InSb has necessitated changes in processing and finishing parameters, as device layer growth by epitaxy or other means often requires a surface roughness average (Ra)~0.1 nm. This study compares two different CMP finishes for new 150mm diameter InSb wafers and examines their suitability for IRFPA applications. InSb surface quality was examined by molecular beam epitaxy (MBE), reflective high energy electron diffraction (RHEED), atomic force microscopy (AFM), thermal X-ray spectroscopy (TXPS), and multiple crystal x-ray diffraction (XRD) for two distinct CMP finishes on InSb(111)B substrates from the same crystal boule. This study has shown that differences result in thermal desorption properties with the CMP process, consistent with differences in surface smoothness and oxide composition. Better surface composition and crystallinity were produced with a modified CMP process for the 150mm diameter crystals. We conclude that the differential ratio between the pH, the oxidizer percentage, and the buffering percentage of the modified CMP process is a benefit to larger diameter InSb IRFPA applications.

Paper Details

Date Published: 24 September 2009
PDF: 12 pages
Proc. SPIE 7487, Optical Materials in Defence Systems Technology VI, 74870C (24 September 2009); doi: 10.1117/12.830114
Show Author Affiliations
P. Flint, Galaxy Compound Semiconductors, Inc. (United States)
L. P. Allen, Galaxy Compound Semiconductors, Inc. (United States)
G. Dallas, Galaxy Compound Semiconductors, Inc. (United States)
B. D. Ruchert, Galaxy Compound Semiconductors, Inc. (United States)
D. Bakken, Galaxy Compound Semiconductors, Inc. (United States)
K. Blanchat, Galaxy Compound Semiconductors, Inc. (United States)
S. R. Vangala, Univ. of Massachusetts Lowell (United States)
W. D. Goodhue, Univ. of Massachusetts Lowell (United States)
D. Bliss, Air Force Research Lab. (United States)
H. Dauplais, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 7487:
Optical Materials in Defence Systems Technology VI
James G. Grote; François Kajzar; Roberto Zamboni, Editor(s)

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