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Proceedings Paper

Inspection of complex OPC patterns for 4x node and beyond
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Paper Abstract

OPC (Optical Proximity Correction) technique is inevitable and getting more complex to resolve finer features on wafer with existing optical lithography technology. Some SRAFs generated with special model-based OPC engines are so sophisticated that we can hardly imagine final patterns on wafer simply by seeing patterns on reticle. These model-based OPCs consist of many kinds of assist features since they are designed differently according to various target features on wafer and lithographic conditions. Not only small main features but also even smaller and aggressive SRAFs (Sub Resolution Assist Features) may cause too many false counts and/or nuisance defects during the reticle inspection, which makes inspection TAT (Turn Around Time) longer and inspection process more laborconsuming. To improve the inspectability of this sort of complex OPC patterns, appropriate MRC (Mask Rule Check) rules should be considered.[1][2] As far as the inspection methods are concerned, several approaches have been developed, such as TLD (Thin Line Desense), LPI (Lithographic Plane Inspection)[3][4], and Aerial Image Based Inspection[5][6] to relax MRC rules. In this paper, we've compared and analyzed the functionalities of enhanced inspection methods for complex OPC features of 4x nodes and beyond.

Paper Details

Date Published: 23 September 2009
PDF: 10 pages
Proc. SPIE 7488, Photomask Technology 2009, 74882S (23 September 2009); doi: 10.1117/12.830032
Show Author Affiliations
Sang Hoon Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Wonil Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Won-Sun Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong Hoon Chung, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
HanKu Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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