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Proceedings Paper

Behavior of the molybdenum silicide thin film by 193nm exposure
Author(s): Sin-Ju Yang; Han-Sun Cha; Jin-ho Ahn; Kee-Soo Nam
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Paper Abstract

In order to embody high resolution at 32 nm and below, molybdenum silicide (MoSi) phase shift mask (PSM) is essential material in the ArF lithography process, generally. But some problems reported from for the variation of PSM characteristics like transmittance variation and chemical durability. This change in characteristics is an issue for the yield drop in the semiconductor device manufacturing. So we study the behavior of MoSi PSM thin film in the view point of the ArF laser exposure in this paper. Firstly, the problems of MoSi thin film by the 193 nm exposure are observed. From the result, 0.36 % of the transmittance was changed by 193 nm irradiation with 10 kJ of energy. Accordingly, MoSi thin film characteristics were degraded by the ArF laser irradiation. The reason for the transmittance degradation by irradiation for MoSi thin film was analyzed. Also, we found that the oxygen was activated by the ArF laser and this activated oxygen penetrated to MoSi thin film. Consequently, the transmittance increased by the penetrated oxygen. Then we investigated the improvement scheme for MoSi thin film's irradiation characteristic. First, the transmittance of the thin film was changed by the reactive gas ratio change. Also, the Si ratio in the MoSi thin film was changed. Lastly, densification process was applied. Consequently, the densification process for the MoSi thin film improved the irradiation characteristics.

Paper Details

Date Published: 23 September 2009
PDF: 12 pages
Proc. SPIE 7488, Photomask Technology 2009, 74880M (23 September 2009); doi: 10.1117/12.829749
Show Author Affiliations
Sin-Ju Yang, S&S Tech Corp. (Korea, Republic of)
Han-Sun Cha, Hanyang Univ. (Korea, Republic of)
Jin-ho Ahn, Hanyang Univ. (Korea, Republic of)
Kee-Soo Nam, S&S Tech Corp. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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