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Proceedings Paper

Actinic EUVL mask blank inspection capability with time delay integration mode
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Paper Abstract

We have been developing an actinic full-field mask blank inspection system to detect multilayer phase defects with dark field imaging. Using the current system, we have analyzed the probability of defect detection and occurrence of false defects with variations in defect signal intensity and in background intensity. The result indicates that the size of the smallest defect for 100 % detection with no false defect at full-field inspection is 2.0 nm in height and 78 nm in width. A 100 % detection of smaller defects, 1.5 nm high and 60 nm wide, with no false defect at full-field inspection requires 46 % reduction of the detection threshold. This means that for further improvement of defect sensitivity, a 46 % reduction of CCD noise level, or improvement of the defect detection algorithm, will be required.

Paper Details

Date Published: 30 September 2009
PDF: 6 pages
Proc. SPIE 7488, Photomask Technology 2009, 74881B (30 September 2009); doi: 10.1117/12.829724
Show Author Affiliations
Takeshi Yamane, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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