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Proceedings Paper

Investigation of buried EUV mask defect printability using actinic inspection and fast simulation
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Paper Abstract

The fast simulator RADICAL and the Actinic Inspection Tool (AIT) are used in advance of availability of high volume manufacturing quality exposure tools, resists, and masks to assess the expected defect printability levels in production conditions. AIT images are analyzed to qualitatively demonstrate general trends in defect printability: defects smaller than 0.5nm tall on the multilayer surface can cause an unacceptable critical dimension (CD) change, CD change increases for taller defects, and defect printability varies asymmetrically through focus. RADICAL is used to derive quantitative limits for defect size and demonstrate the effects of focus and illumination for 22nm and 16nm dense lines. For 22nm dense lines at best focus a 0.8nm tall defect causes a 10% CD change. For 16nm lines a 0.4nm tall defect causes a 10% CD change. The CD is shown to be more sensitive to buried defects out of focus, but less sensitive to defects in focus if annular or dipole illumination is used.

Paper Details

Date Published: 23 September 2009
PDF: 10 pages
Proc. SPIE 7488, Photomask Technology 2009, 74882H (23 September 2009); doi: 10.1117/12.829716
Show Author Affiliations
Chris H. Clifford, Univ. of California, Berkeley (United States)
Tina T. Chan, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Laboratory (United States)
Iacopo Mochi, Lawrence Berkeley National Laboratory (United States)
Ted Liang, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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