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Proceedings Paper

Reduced basis method for computational lithography
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Paper Abstract

A bottleneck for computational lithography and optical metrology are long computational times for near field simulations. For design, optimization, and inverse scatterometry usually the same basic layout has to be simulated multiple times for different values of geometrical parameters. The reduced basis method allows to split up the solution process of a parameterized model into an expensive offline and a cheap online part. After constructing the reduced basis offline, the reduced model can be solved online very fast in the order of seconds or below. Error estimators assure the reliability of the reduced basis solution and are used for self adaptive construction of the reduced system. We explain the idea of reduced basis and use the finite element solver JCMsuite constructing the reduced basis system. We present a 3D optimization application from optical proximity correction (OPC).

Paper Details

Date Published: 23 September 2009
PDF: 9 pages
Proc. SPIE 7488, Photomask Technology 2009, 74882B (23 September 2009); doi: 10.1117/12.829639
Show Author Affiliations
Jan Pomplun, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Lin Zschiedrich, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Sven Burger, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Frank Schmidt, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)


Published in SPIE Proceedings Vol. 7488:
Photomask Technology 2009
Larry S. Zurbrick; M. Warren Montgomery, Editor(s)

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