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Proceedings Paper

Green LED development in polar and non-polar growth orientation
Author(s): Christian Wetzel; Mingwei Zhu; Yufeng Li; Wenting Hou; Liang Zhao; Wei Zhao; Shi You; Christoph Stark; Yong Xia; Michael DiBiccari; Theeradetch Detchprohm
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Paper Abstract

The green spectral region provides a formidable challenge for energy efficient light emitting diodes. In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 - 580 nm LEDs by rigorous defect reduction and thrive for alloy uniformity. We achieve best results in homoepitaxy on polar c-plane, and non-polar a-plane and m-plane bulk GaN. By the choice of crystal orientation, the dipole of piezoelectric polarization in the quantum wells can be optimized for highest diode efficiency. We report progress towards the goal of reduced efficiency droop at longer wavelengths.

Paper Details

Date Published: 18 August 2009
PDF: 15 pages
Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742204 (18 August 2009); doi: 10.1117/12.829513
Show Author Affiliations
Christian Wetzel, Rensselaer Polytechnic Institute (United States)
Mingwei Zhu, Rensselaer Polytechnic Institute (United States)
Yufeng Li, Rensselaer Polytechnic Institute (United States)
Wenting Hou, Rensselaer Polytechnic Institute (United States)
Liang Zhao, Rensselaer Polytechnic Institute (United States)
Wei Zhao, Rensselaer Polytechnic Institute (United States)
Shi You, Rensselaer Polytechnic Institute (United States)
Christoph Stark, Rensselaer Polytechnic Institute (United States)
Yong Xia, Rensselaer Polytechnic Institute (United States)
Michael DiBiccari, Rensselaer Polytechnic Institute (United States)
Theeradetch Detchprohm, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 7422:
Ninth International Conference on Solid State Lighting
Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi, Editor(s)

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