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Proceedings Paper

The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode
Author(s): Eun-Hyun Park; Jin Jang
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Paper Abstract

Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.

Paper Details

Date Published: 18 August 2009
PDF: 8 pages
Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742203 (18 August 2009); doi: 10.1117/12.829445
Show Author Affiliations
Eun-Hyun Park, Kyung Hee Univ. (Korea, Republic of)
S-Light, Co., Ltd. (Korea, Republic of)
Jin Jang, Kyung Hee Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7422:
Ninth International Conference on Solid State Lighting
Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi, Editor(s)

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