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Proceedings Paper

Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range
Author(s): M. de la Mare; Q. Zhuang; A. Patanè; S. Dhar; A. Krier
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Paper Abstract

We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model).

Paper Details

Date Published: 24 September 2009
PDF: 9 pages
Proc. SPIE 7474, Sensors, Systems, and Next-Generation Satellites XIII, 747422 (24 September 2009); doi: 10.1117/12.829354
Show Author Affiliations
M. de la Mare, Lancaster Univ. (United Kingdom)
Q. Zhuang, Lancaster Univ. (United Kingdom)
A. Patanè, Nottingham Univ. (United Kingdom)
S. Dhar, Univ. of Calcutta (India)
A. Krier, Lancaster Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 7474:
Sensors, Systems, and Next-Generation Satellites XIII
Roland Meynart; Steven P. Neeck; Haruhisa Shimoda, Editor(s)

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