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Proceedings Paper

Growth and electronic properties of Ge-SixGe1-x core-shell nanowire heterostructures
Author(s): Junghyo Nah; K. M. Varahramyan; E.-S. Liu; A. Opotowsky; D. Ferrer; S. K. Banerjee; E. Tutuc
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Paper Abstract

We report the growth and characterization of Ge-SixGe1-x core-shell nanowires. Using a combination of vapor-liquid-solid nanowire growth and ultra-high-vacuum chemical vapor deposition conformal growth, we demonstrate the realization of epitaxial Ge-SixGe1-x core-shell nanowire heterostructures with tunable shell content. We investigate the intrinsic electronic properties of Ge-SixGe1-x core-shell nanowires using back-gate dependent two- and four-terminal resistance measurements, and demonstrate high performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain.

Paper Details

Date Published: 3 September 2009
PDF: 7 pages
Proc. SPIE 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials, 74060O (3 September 2009); doi: 10.1117/12.829159
Show Author Affiliations
Junghyo Nah, The Univ. of Texas at Austin (United States)
K. M. Varahramyan, The Univ. of Texas at Austin (United States)
E.-S. Liu, The Univ. of Texas at Austin (United States)
A. Opotowsky, The Univ. of Texas at Austin (United States)
D. Ferrer, The Univ. of Texas at Austin (United States)
S. K. Banerjee, The Univ. of Texas at Austin (United States)
E. Tutuc, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 7406:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials
M. Saif Islam; A. Alec Talin; Stephen D. Hersee, Editor(s)

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