Share Email Print

Proceedings Paper

Understanding pattern collapse in high-resolution lithography: impact of feature width on critical stress
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Chemically amplified resists have served as high resolution and high photospeed patterning materials in the fabrication of modern microelectronic devices for more than two decades. A significant amount of research during that time, and in particular more recently, has focused on minimizing line width roughness and on improving the achievable resolution and sensitivity of resist materials. While these lithographic parameters are certainly important, the distortion of the resist pattern during wet processing and subsequent drying can have significant negative impacts on performance and is often relatively overlooked as a major resist resolution and performance limiter. Resist pattern distortion after development and during drying is mainly due to the unbalanced capillary forces created due to pattern asymmetries which give rise to variations in liquid meniscus radii of curvature as the final rinse liquid is dried from the pattern. These capillary forces are dependent upon the surface tension of the final rinsing solvent, the contact angle of the rinse liquid with the side wall of the resist line, and the pattern space widths and sidewall angles. The demand for resist films with smaller feature sizes has led to a reduction in resist pattern dimensions resulting in overall poor mechanical strength and a decrease in the adhesion forces at the resist line/substrate interface. In this work, the pattern collapse behavior of a hydroxystyrene-based resist copolymer is studied. Ultra-thin film effects and the role of the feature width of the resist line on pattern collapse are also investigated.

Paper Details

Date Published: 1 April 2009
PDF: 8 pages
Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 727334 (1 April 2009); doi: 10.1117/12.829142
Show Author Affiliations
David E Noga, Georgia Institute of Technology (United States)
Richard A. Lawson, Georgia Institute of Technology (United States)
Cheng-Tsung Lee, Georgia Institute of Technology (United States)
Laren M. Tolbert, Georgia Institute of Technology (United States)
Clifford L Henderson, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 7273:
Advances in Resist Materials and Processing Technology XXVI
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top