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Proceedings Paper

Low dimensional III-V compound semiconductor structures
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Paper Abstract

Material incompatibilities among dissimilar group III-V compound semiconductors (III-V CSs) often place limits on combining epitaxial thin films, however low-dimensional epitaxial structures (e.g., quantum dots and nanowires) demonstrate coherent growth even on incompatible surfaces. First, InAs QDs grown by molecular beam epitaxy on GaAs are described. Two-dimensional to three-dimensional morphological transition, lateral size evolution and vertical alignment of InAs QDs in a single and multiple stacks will be illustrated. Second, InP nanowires grown on non-single crystalline surfaces by metal organic chemical vapor deposition are described with the view toward applications where III-V CSs are functionally integrated onto various material platforms.

Paper Details

Date Published: 3 September 2009
PDF: 20 pages
Proc. SPIE 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials, 74060F (3 September 2009); doi: 10.1117/12.829095
Show Author Affiliations
Nobuhiko P. Kobayashi, Univ. of California, Santa Cruz (United States)
NASA Ames Research Ctr. (United States)


Published in SPIE Proceedings Vol. 7406:
Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials
M. Saif Islam; A. Alec Talin; Stephen D. Hersee, Editor(s)

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