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Proceedings Paper

Growth of graphene films by plasma enhanced chemical vapour deposition
Author(s): Laurent Baraton; Laurent Gangloff; Stéphane Xavier; Costel Sorin Cojocaru; Vincent Huc; Pierre Legagneux; Young Hee Lee; Didier Pribat
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Paper Abstract

Since it was isolated in 2004, graphene, the first known 2D crystal, is the object of a growing interest, due to the range of its possible applications as well as its intrinsic properties. From large scale electronics and photovoltaics to spintronics and fundamental quantum phenomena, graphene films have attracted a large community of researchers. But bringing graphene to industrial applications will require a reliable, low cost and easily scalable synthesis process. In this paper we present a new growth process based on plasma enhanced chemical vapor deposition. Furthermore, we show that, when the substrate is an oxidized silicon wafer covered by a nickel thin film, graphene is formed not only on top of the nickel film, but also at the interface with the supporting SiO2 layer. The films grown using this method were characterized using classical methods (Raman spectroscopy, AFM, SEM) and their conductivity is found to be close to those reported by others.

Paper Details

Date Published: 18 August 2009
PDF: 6 pages
Proc. SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II, 73990T (18 August 2009); doi: 10.1117/12.828747
Show Author Affiliations
Laurent Baraton, NanoMade, LPICM, Ecole Polytechnique (France)
Laurent Gangloff, THALES, TRT/Nanocarb (France)
Stéphane Xavier, THALES, TRT/Nanocarb (France)
Costel Sorin Cojocaru, NanoMade, LPICM, Ecole Polytechnique (France)
Vincent Huc, Univ. Paris-Sud XI (France)
Pierre Legagneux, THALES, TRT/Nanocarb (France)
Young Hee Lee, Sungkyunkwan Univ. (Korea, Republic of)
Didier Pribat, NanoMade, LPICM, Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 7399:
Carbon Nanotubes, Graphene, and Associated Devices II
Manijeh Razeghi; Didier Pribat; Young-Hee Lee, Editor(s)

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