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Proceedings Paper

Pool-Frenkel emission and hopping conduction in semiconducting carbon nanotube transistor
Author(s): David Perello; Woojong Yu; Dong Jae Bae; Seung Jin Chae; Moon J. Kim; Young Hee Lee; Minhee Yun
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Paper Abstract

The effect of using EBL with devices incorporating CNT has also been investigated. The effect on metallic and semiconducting CNT exposure in the channel of the transistor devices was examined and a physical mechanism for the variations discussed. We show that the subsequent generation of trap states along the CNT channel varies the conduction mechanism of the nanotube and has a significant effect on device performance. Metallic and semiconducting CNT react very differently, with an apparent increased localization effect in the metallic tubes responsible for dramatic decreases in conductance.

Paper Details

Date Published: 20 August 2009
PDF: 6 pages
Proc. SPIE 7399, Carbon Nanotubes, Graphene, and Associated Devices II, 739907 (20 August 2009); doi: 10.1117/12.828642
Show Author Affiliations
David Perello, Univ. of Pittsburgh (United States)
Woojong Yu, Sungkyunkwan Univ. (Korea, Republic of)
Dong Jae Bae, Sungkyunkwan Univ. (Korea, Republic of)
Seung Jin Chae, Sungkyunkwan Univ. (Korea, Republic of)
Moon J. Kim, The Univ. of Texas at Dallas (United States)
Young Hee Lee, Sungkyunkwan Univ. (Korea, Republic of)
Minhee Yun, Univ. of Pittsburgh (United States)

Published in SPIE Proceedings Vol. 7399:
Carbon Nanotubes, Graphene, and Associated Devices II
Manijeh Razeghi; Didier Pribat; Young-Hee Lee, Editor(s)

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