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Proceedings Paper

Growth and characterization of Cu2ZnSnS4 nanostructures using anodized aluminum as the growth mask
Author(s): C. P. Chan; Z. Chen; H. Lam; C. Surya
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Paper Abstract

In this paper we report the growth and characterization of Cu2ZnSnS4 (CZTS) nanostructures by co-electrodeposition technique using CuCl2, SnCl2 and ZnCl2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 104cm-1. Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.

Paper Details

Date Published: 20 August 2009
PDF: 9 pages
Proc. SPIE 7411, Nanoscale Photonic and Cell Technologies for Photovoltaics II, 741108 (20 August 2009); doi: 10.1117/12.828172
Show Author Affiliations
C. P. Chan, The Hong Kong Polytechnic Univ. (Hong Kong, China)
Z. Chen, The Hong Kong Polytechnic Univ. (Hong Kong, China)
H. Lam, The Hong Kong Polytechnic Univ. (Hong Kong, China)
C. Surya, The Hong Kong Polytechnic Univ. (Hong Kong, China)


Published in SPIE Proceedings Vol. 7411:
Nanoscale Photonic and Cell Technologies for Photovoltaics II
Loucas Tsakalakos, Editor(s)

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