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Proceedings Paper

Optical and structural properties of InN grown by HPCVD
Author(s): M. Buegler; M. Alevli; R. Atalay; G. Durkaya; I. Senevirathna; M. Jamil; I. Ferguson; N. Dietz
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Paper Abstract

The optical and structural properties of InN layers grown by 'High Pressure Chemical Vapor Deposition' (HPCVD) using a pulsed precursor approach have been studied. The study focuses on the effect of ammonia precursor exposure time and magnitude on the InN layer quality. The samples have been analyzed by X-ray diffraction, Raman scattering, infra red reflectance spectroscopy and photoluminescence spectroscopy. Raman measurements and X-ray diffraction showed the grown layers to be single phase InN of high crystalline quality. The E2(high) Raman mode showed FWHM's as small as 9.2 cm-1. The FWHM's of the InN(0002) X-ray Bragg reflex in the 2Θ-Ω- scans were around 350 arcsec, with rocking curve values as low as 1152 arcsec Photoluminescence features have been observed down to 0.7 eV, where the low energy cutoff might be due to the detector limitation. The analysis of the IR reflectance spectra shows that the free carrier concentrations are as low as as 3.3•1018 cm-3 for InN layers grown on sapphire substrates.

Paper Details

Date Published: 18 August 2009
PDF: 6 pages
Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742218 (18 August 2009); doi: 10.1117/12.828163
Show Author Affiliations
M. Buegler, Georgia State Univ. (United States)
M. Alevli, Georgia State Univ. (United States)
R. Atalay, Georgia State Univ. (United States)
G. Durkaya, Georgia State Univ. (United States)
I. Senevirathna, Georgia State Univ. (United States)
M. Jamil, Georgia Institute of Technology (United States)
I. Ferguson, Georgia Institute of Technology (United States)
N. Dietz, Georgia State Univ. (United States)


Published in SPIE Proceedings Vol. 7422:
Ninth International Conference on Solid State Lighting
Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi, Editor(s)

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