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Proceedings Paper

Probability current related to a non-quadratic Hamiltonian: application to semiconductors
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Paper Abstract

In non-centrosymmetric semiconductors with zinc-blende structure grown along the [110] crystallographic direction, electrons with up and down spins undergo different quantum phase shifts upon tunneling, which can be wieved as resulting from spin precession around a complex magnetic field. There is no spin filtering but a pure spin dephasing. The phase shift of the transmitted wave is proportional to the overall barrier-material thickness. We show that a device incorporating a number of resonant tunnel barriers constitutes an efficient quantum-phase shifter.

Paper Details

Date Published: 24 August 2009
PDF: 5 pages
Proc. SPIE 7398, Spintronics II, 73980Z (24 August 2009); doi: 10.1117/12.828037
Show Author Affiliations
Henri-Jean Drouhin, Ecole Polytechnique (France)
Jean-Eric Wegrowe, Ecole Polytechnique (France)
T. L. Hoai Nguyen, Ecole Polytechnique (France)
Univ. Paris-Sud (France)
Guy Fishman, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 7398:
Spintronics II
Manijeh Razeghi; Henri-Jean M. Drouhin; Jean-Eric Wegrowe, Editor(s)

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