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Proceedings Paper

Light weight low cost InGaP/GaAs dual-junction solar cells on 4" epitaxial liftoff (ELO) wafers
Author(s): Rao Tatavarti; G. Hillier; C. Youtsey; D. McCallum; G. Martin; A. Wibowo; R. Navaratnarajah; F. Tuminello; D. Hertkorn; M. Disabb; N. Pan
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Paper Abstract

High-efficiency, low-cost InGaP/GaAs dual-junction epitaxial liftoff (ELO) solar cells have been fabricated on full 4" GaAs substrates. These dual-junction solar cells exhibited an efficiency of 28.69% at AM1.5D, one-sun illumination. This is the highest reported efficiency for dual-junction ELO solar cells to date. After application of antireflection coating, the dual-junction ELO cells also exhibited fill factor >85%, open circuit voltage = 2.37 V, and short circuit current density = 13 mA/cm2. An external quantum efficiency >85% was measured for both the GaAs and InGaP sub-cells. An ELO dual-junction solar cell wafer typically weighs less than 1.7 g and has a total semiconductor thickness <5 μm. Reclaim and reuse of the GaAs substrate after the ELO process has been successfully demonstrated.

Paper Details

Date Published: 21 August 2009
PDF: 6 pages
Proc. SPIE 7407, High and Low Concentrator Systems for Solar Electric Applications IV, 74070B (21 August 2009); doi: 10.1117/12.827449
Show Author Affiliations
Rao Tatavarti, MicroLink Devices, Inc. (United States)
G. Hillier, MicroLink Devices, Inc. (United States)
C. Youtsey, MicroLink Devices, Inc. (United States)
D. McCallum, MicroLink Devices, Inc. (United States)
G. Martin, MicroLink Devices, Inc. (United States)
A. Wibowo, MicroLink Devices, Inc. (United States)
R. Navaratnarajah, MicroLink Devices, Inc. (United States)
F. Tuminello, MicroLink Devices, Inc. (United States)
D. Hertkorn, MicroLink Devices, Inc. (United States)
M. Disabb, MicroLink Devices, Inc. (United States)
N. Pan, MicroLink Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 7407:
High and Low Concentrator Systems for Solar Electric Applications IV
Lori E. Greene, Editor(s)

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