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Proceedings Paper

Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor
Author(s): Alan E. Delahoy; Tongyu Liu; Gaurav Saraf; Anamika Patel; John Cambridge; Sheyu Guo; Paola Delli Veneri; Lucia V. Mercaldo; Iurie Usatii
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Paper Abstract

This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H / nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.

Paper Details

Date Published: 20 August 2009
PDF: 9 pages
Proc. SPIE 7409, Thin Film Solar Technology, 74090G (20 August 2009); doi: 10.1117/12.827085
Show Author Affiliations
Alan E. Delahoy, EPV Solar, Inc. (United States)
Tongyu Liu, EPV Solar, Inc. (United States)
Gaurav Saraf, EPV Solar, Inc. (United States)
Anamika Patel, EPV Solar, Inc. (United States)
John Cambridge, EPV Solar, Inc. (United States)
Sheyu Guo, EPV Solar, Inc. (United States)
Paola Delli Veneri, ENEA (Italy)
Lucia V. Mercaldo, ENEA (Italy)
Iurie Usatii, ENEA (Italy)


Published in SPIE Proceedings Vol. 7409:
Thin Film Solar Technology
Alan E. Delahoy; Louay A. Eldada, Editor(s)

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