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Proceedings Paper

Preparation of crystalline dielectric modification silane layer by spin-coating and its improvements on organic transistor performance
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Paper Abstract

Self-assembled monolayers (SAMs) of alkyl silane compounds have been used for modifying gate dielectrics surface of organic field-effect transistors (OFETs) and they have frequently shown improvement of FET performances. In this paper we deposited alkyl silane SAMs by simple spin-coating technique onto Si/SiO2 substrates. Spin-cast octadecyltrimethoxysilane (OTMS) SAMs had ultra smooth crystalline surface and provided an excellent dielectric surface for OFETs. In fact on the OTMS SAM treated dielectric, pentacene OFETs showed hole mobilities over 2.0 cm2/Vs and electron mobilties over 1.0 and 5.0 cm2/Vs were demonstrated for 3,4:9,10-perylene diimide derivative and C60, respectively. Fabrication technique and characterizations of the OTMS SAMs is described.

Paper Details

Date Published: 27 August 2009
PDF: 8 pages
Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 741718 (27 August 2009); doi: 10.1117/12.827000
Show Author Affiliations
Yutaka Ito, Toppan Printing Co., Ltd. (Japan)
Ajay Virkar, Stanford Univ. (United States)
Jason Locklin, Univ. of Georgia (United States)
Stefan Mannsfeld, Stanford Synchrotron Radiation Lab. (United States)
Michael Toney, Stanford Synchrotron Radiation Lab. (United States)
Zhenan Bao, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 7417:
Organic Field-Effect Transistors VIII
Zhenan Bao; Iain McCulloch, Editor(s)

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