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Proceedings Paper

Implementation of multiple ROI with single FOV for advanced mask metrology
Author(s): Kyu-hwa Jeong; Hatsey Frezghi; Malahat Tavassoli; Stephen Kim; Ray Morgan
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Paper Abstract

As technology nodes go down to 45nm and below, mask metrology becomes more important as the critical features decrease in size, while, at the same time, the number of measurements that need to be performed increases. OPC and RET put further burden on metrology as it is typical to measure more than one dimension on a single feature. In order to maximize the throughput of metrology tools and to keep up with the demand for more measurements, we have implemented the ability to measure multiple CD sites within a field of view without any stage movement in fully automated ways in a production environment. This in turn reduces total mask measurement time and helps to increase tool capacity

Paper Details

Date Published: 23 March 2009
PDF: 9 pages
Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 72724D (23 March 2009); doi: 10.1117/12.826930
Show Author Affiliations
Kyu-hwa Jeong, Intel Corp. (United States)
Hatsey Frezghi, Intel Corp. (United States)
Malahat Tavassoli, Intel Corp. (United States)
Stephen Kim, Synopsys, Inc. (United States)
Ray Morgan, SEMI North America (United States)

Published in SPIE Proceedings Vol. 7272:
Metrology, Inspection, and Process Control for Microlithography XXIII
John A. Allgair; Christopher J. Raymond, Editor(s)

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