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Proceedings Paper

Performance and fabrication of organic field effect transistors with soluble oligomers
Author(s): Yosuke Kitajima; Jiasheng Ru; Teruyoshi Mizutani; Kenzo Kojima; Shizuyasu Ochiai
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Paper Abstract

We fabricated an organic thin film prepared by oligomers of organic material according to the solution method and examined the quality of thin film using an X-Ray diffractometer. Based on the results, we fabricated flexible-organic field effect transistors using the spin-coating method. We adopted a polyethylenenaphthalate (PEN) film as the substrate, a cross-linked poly-4-vinylphenol (PVP) thin film as the gate dielectric insulation layer and a soluble quaterthiophene layer or pentacene layer as an active layer. The carrier mobility of the prepared quaterthiophene- organic-field effect transistor, the threshold voltage and the ON/OFF ratio are 2.27×10-3 cm2/Vs, -37V and -37V respectively. In soluble Pentacene-OFET, the mobility is 0.09cm2/Vs, the ON/OFF is about 102 and the threshold voltage (Vth) is -7V.

Paper Details

Date Published: 20 August 2009
PDF: 11 pages
Proc. SPIE 7417, Organic Field-Effect Transistors VIII, 74170H (20 August 2009); doi: 10.1117/12.826831
Show Author Affiliations
Yosuke Kitajima, Aichi Institute of Technology (Japan)
Jiasheng Ru, Aichi Institute of Technology (Japan)
Teruyoshi Mizutani, Aichi Institute of Technology (Japan)
Kenzo Kojima, Aichi Institute of Technology (Japan)
Shizuyasu Ochiai, Aichi Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 7417:
Organic Field-Effect Transistors VIII
Zhenan Bao; Iain McCulloch, Editor(s)

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