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Proceedings Paper

InSb nanowire based field effect transistor
Author(s): X. Jing; M. Penchev; J. Zhong; R. Paul; M. Ozkan; C. Ozkan
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Paper Abstract

InSb nanowire field effect transistors (NWFET) were fabricated using electrochemically synthesized nanowires. To accurately extract transistor parameters, we introduced a model which takes into account the often ignored ungated nanowire segments. A significant improvement in extracted device parameters was observed which demonstrated that conventional models tend to underestimate the gate effect and therefore lead to lower carrier mobilities. Based on the model, we obtained a NWFET ON current of 11.8uA, an ION/IOFF ratio of 63.5 and hole mobility of 292.84 cm2V-1s-1.

Paper Details

Date Published: 20 August 2009
PDF: 6 pages
Proc. SPIE 7402, Nanoengineering: Fabrication, Properties, Optics, and Devices VI, 74020I (20 August 2009); doi: 10.1117/12.826805
Show Author Affiliations
X. Jing, Univ. of California, Riverside (United States)
M. Penchev, Univ. of California, Riverside (United States)
J. Zhong, Univ. of California, Riverside (United States)
R. Paul, Univ. of California, Riverside (United States)
M. Ozkan, Univ. of California, Riverside (United States)
C. Ozkan, Univ. of California, Riverside (United States)


Published in SPIE Proceedings Vol. 7402:
Nanoengineering: Fabrication, Properties, Optics, and Devices VI
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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