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Proceedings Paper

Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation
Author(s): H. S. Kim; E. Plis; S. Myers; A. Khoshakhlagh; N. Gautam; M. N. Kutty; Y. D. Sharma; L. R. Dawson; S. Krishna
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Paper Abstract

We report on surface passivation using SU-8 for type-II InAs/GaSb strained layers superlattice (SLS) detectors with a PIN design operating in mid-wave infrared (MWIR) spectral region (λ50% cut-off ~ 4.4 μm). Material growth and characterization, single pixel device fabrication and testing, as well as focal plane array (FPA) processing are described. High quality strain-balanced SLS material with FWHM of 1st SLS satellite peak of 36 arcsec is demonstrated. The electrical and optical performance of devices passivated with SU-8 are reported and compared with those of unpassivated devices. The dark current density of a single pixel device with SU-8 passivation showed four orders of magnitude reduction compared to the device without any passivation. At 77K, the zero-bias responsivity and detectivity are equal to 1.1 A/W and 4 x 1012 Jones at 4μm, respectively, for the SU-8 passivated test pixel on the focal plane array.

Paper Details

Date Published: 9 September 2009
PDF: 9 pages
Proc. SPIE 7467, Nanophotonics and Macrophotonics for Space Environments III, 74670U (9 September 2009); doi: 10.1117/12.826775
Show Author Affiliations
H. S. Kim, The Univ. of New Mexico (United States)
E. Plis, The Univ. of New Mexico (United States)
S. Myers, The Univ. of New Mexico (United States)
A. Khoshakhlagh, The Univ. of New Mexico (United States)
N. Gautam, The Univ. of New Mexico (United States)
M. N. Kutty, The Univ. of New Mexico (United States)
Y. D. Sharma, The Univ. of New Mexico (United States)
L. R. Dawson, The Univ. of New Mexico (United States)
S. Krishna, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7467:
Nanophotonics and Macrophotonics for Space Environments III
Edward W. Taylor; David A. Cardimona, Editor(s)

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