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Proceedings Paper

Effect of post-sulfurization annealing and gallium grading on thinner CuIn1-xGaxS2 absorbers
Author(s): Ashwani Kaul; Parag Vasekar; Shirish A. Pethe; Neelkanth G. Dhere
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Paper Abstract

Thinner CuIn1-xGaxS2 (CIGS2) solar cells are being prepared with an aim to reduce the consumption of indium and gallium. Post-sulfurization annealing is being used to enhance the grain size in order to overcome the problem of very small grains that tend to form in thinner films that are not desirable for device quality solar cells. Based on the fact that gallium gradient that is typically found in CIGS and CIGS2 solar cells has beneficial effect on preventing back contact recombination of minority carriers, an attempt to determine the optimum regime for post-sulfurization annealing is made to derive the benefits from larger grains and gallium gradient. An initial set of experiments carried out at PV materials laboratory at FSEC has shown encouraging results with cell efficiencies of 9-10% for thinner (1.2-1.6 μm) films.

Paper Details

Date Published: 20 August 2009
PDF: 9 pages
Proc. SPIE 7409, Thin Film Solar Technology, 740913 (20 August 2009); doi: 10.1117/12.826464
Show Author Affiliations
Ashwani Kaul, Univ. of Central Florida (United States)
Parag Vasekar, Univ. of Central Florida (United States)
Shirish A. Pethe, Univ. of Central Florida (United States)
Neelkanth G. Dhere, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 7409:
Thin Film Solar Technology
Alan E. Delahoy; Louay A. Eldada, Editor(s)

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